ISO INTERNATIONAL STANDARD 22415 First edition 2019-05 Surface chemical analysis Secondary ion mass spectrometry - Method for determining yield volume in argon cluster sputter depth profiling of organic materials Analyse chimique des surfaces -Spectrométrie de masse des ions secondaires- -Méthode de détermination du rendement volumique dans le cadre du profilage en profondeur de matériaux organiques par pulverisation d'argon en grappe Reference number ISO 22415:2019(E) os1 IS02019 IS0 22415:2019(E) COPYRIGHTPROTECTEDDOCUMENT @ ISO 2019 All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting on the internet or an intranet, without prior written permission. Permission can be requested from either IsO at the address below or Iso's member body in the country of the requester. ISO copyright office CP 401 : Ch. de Blandonnet 8 CH-1214 Vernier, Geneva Phone: +4122 749 0111 Fax: +41 22 749 09 47 Email: [email protected] Website: www.iso.org Published in Switzerland ii @ IS0 2019 - All rights reserved IS0 22415:2019(E) Contents Page Foreword ..iv Introduction ..V 1 Scope. ..1 2 Normative references ..1 3 Terms and definitions 4 Symbols (and abbreviated terms) ..1 5 Requirements .3 5.1 Test samples .3 5.2 Sputtering ion source .3 5.3 Analysis conditions .4 6 Data Acquisition. .5 6.1 Analysis.. .5 6.2 Minimum data requirements. .6 6.3 Data quality .6 7 Calculation of sputtering yield volume .6 7.1 Introduction 6 7.2 Determination of sputtering yield volume for a single layer profile 7 7.2.1 Introduction 7.2.2 First interface position 7 7.2.3 Interface position between two materials 7 7.2.4 Sputtering time. 7 7.2.5 Calculation of sputtering yield volume using a single layer thickness. .8 7.3 Determination of sputtering yield volume from profiles of layers of more than one thickness 9 7.3.1 Introduction .9 7.3.2 First interface ..9 7.3.3 Interface between two materials 9 7.3.4 Areicdoseofionsusedforsputtering 10 7.3.5 Calculation of sputtering yield volume using more than one-layer thickness. 8 Reporting of sputtering yield volume .11 8.1 Required information. 11 Annex A (informative) Sputtered area and sputtering beam width ..13 Annex B (informative) Examples of depth profile data ..18 Annex C (informative) Estimation of sputtering yield volumes for argon clusters ..28 Bibliography ..30 @ IS0 2019 - All rights reserved ii