ISO INTERNATIONAL STANDARD 17560 Secondedition 2014-09-15 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon Analyse chimique des surfaces-Spectrométrie de masse des ions secondaires - Dosage du bore dans le silicium par profilage d'épaisseur Reference number IS0 17560:2014(E) LSO IS02014 HS under ed without license from IHS Not for Resale IS0 17560:2014(E) COPYRIGHTPROTECTEDDOCUMENT @ISO2014 All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized otherwise in any form written permission. Permission can be requested from either ISO at the address below or ISO's member body in the country of the requester. ISO copyright office Case postale 56 : CH-1211 Geneva 20 Tel. + 41 22 749 01 11 Fax + 41 22 749 09 47 E-mail [email protected] Web www.iso.org Published in Switzerland @ IS0 2014 - All rights reserved or networking permited without license from IHS Not for Resale IS0 17560:2014(E) Contents Page Foreword ..iv Introduction. ..V 1 Scope. ..1 2 Normative reference. ..1 3 Symbols and abbreviations 4 Principle ..2 5 Reference materials .2 5.1 Reference materials for determination of relative-sensitivity factors .2 5.2 Reference materials for calibration of depth scale .2 6 Apparatus .2 6.1 Secondary-ion mass spectrometer 2 6.2 Stylus profilometer.. .2 6.3 Optical interferometer. .3 7 Specimen. .3 8 Procedure .3 8.1 Adjustment of secondary-ion mass spectrometer 3 8.2 Optimizing the secondary-ion mass spectrometer settings .3 8.3 Specimen introduction. .4 8.4 Detectedions 4 8.5 Measurement of test specimen .4 8.6 Calibration .5 9 Expression of results .6 10 Test report ..7 Annex A (informative) Statistical report of stylus profilometry measurements .8 Bibliography .10 iii ded by IHS under lic se with ISt thout license from IHS Not for Resale